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Room-temperature annealing effects on the basal-plane resistivity of optimally doped YBa2Cu3O7−δ single crystals.
G. Y. Khadzhai, R. V. Vovk, N. R. Vovk, S. N. Kamchatnaya, O. V. Dobrovolskiy
Physica C 545, 14 (2018)

We reveal that the temperature dependence of the basal-plane normal-state electrical resistance of opti- mally doped YBa 2 Cu 3 O 7 −δsingle crystals can be with great accuracy approximated within the framework of the model of s-d electron-phonon scattering. This requires taking into account the fluctuation con- ductivity whose contribution exponentially increases with decreasing temperature and decreases with an increase of oxygen deficiency. Room-temperature annealing improves the sample and, thus, increases the superconducting transition temperature. The temperature of the 2D-3D crossover decreases during annealing.

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Created2019-03-05
Created byJarosław Kłos
Changed2019-03-05
Changed byJarosław Kłos

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